Influence of electrode Fermi energy on interband tunneling
Identifieur interne : 002051 ( France/Analysis ); précédent : 002050; suivant : 002052Influence of electrode Fermi energy on interband tunneling
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Abstract
The choice of the Fermi energy in the electrodes of a GaSb/AlSb/InAs/AlSb/GaSb type-II heterostructure has deep consequences on the physics of interband tunneling. We show that tunneling between electron and hole bands will result in three different current-voltage characteristics depending on the Fermi energy in the electrodes of the device. When electrode doping is high, the device characteristics exhibit a current shoulder at low bias followed by a current peak. Magnetotunneling experiments reveal additional current satellites: one emerging from the shoulder and another one emerging from the peak. The shift in the voltage position of these two features and that of the peak current is opposite when the magnetic field increases. This splitting is evidence of a hybridization gap due to k.p coupling between the electron band in InAs and the hole bands in GaSb.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of electrode Fermi energy on interband tunneling</title><author><name sortKey="Nogaret, A" uniqKey="Nogaret A">A. Nogaret</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Physique des Solides, Institut National des Sciences Appliquées, 31077 Toulouse Cedex, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire de Physique des Solides, Institut National des Sciences Appliquées, 31077 Toulouse Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Midi-Pyrénées</region><settlement type="city">Toulouse</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Service National des Champs Intenses, Centre National de la Recherche Scientifique, 38042 Grenoble Cedex, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Service National des Champs Intenses, Centre National de la Recherche Scientifique, 38042 Grenoble Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Maude, D K" uniqKey="Maude D">D. K. Maude</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Physique des Solides, Institut National des Sciences Appliquées, 31077 Toulouse Cedex, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire de Physique des Solides, Institut National des Sciences Appliquées, 31077 Toulouse Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Midi-Pyrénées</region><settlement type="city">Toulouse</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Service National des Champs Intenses, Centre National de la Recherche Scientifique, 38042 Grenoble Cedex, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Service National des Champs Intenses, Centre National de la Recherche Scientifique, 38042 Grenoble Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Portal, J C" uniqKey="Portal J">J. C. Portal</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Physique des Solides, Institut National des Sciences Appliquées, 31077 Toulouse Cedex, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire de Physique des Solides, Institut National des Sciences Appliquées, 31077 Toulouse Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Midi-Pyrénées</region><settlement type="city">Toulouse</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Service National des Champs Intenses, Centre National de la Recherche Scientifique, 38042 Grenoble Cedex, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Service National des Champs Intenses, Centre National de la Recherche Scientifique, 38042 Grenoble Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Maldonado, M A" uniqKey="Maldonado M">M. A. Maldonado</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>School of Electrical Engineering and Microelectronics Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332-0269</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Géorgie (États-Unis)</region></placeName><wicri:cityArea>School of Electrical Engineering and Microelectronics Research Center, Georgia Institute of Technology, Atlanta</wicri:cityArea></affiliation></author><author><name sortKey="Martin, K P" uniqKey="Martin K">K. P. Martin</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>School of Electrical Engineering and Microelectronics Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332-0269</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Géorgie (États-Unis)</region></placeName><wicri:cityArea>School of Electrical Engineering and Microelectronics Research Center, Georgia Institute of Technology, Atlanta</wicri:cityArea></affiliation></author><author><name sortKey="Carnahan, R E" uniqKey="Carnahan R">R. E. Carnahan</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>School of Electrical Engineering and Microelectronics Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332-0269</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Géorgie (États-Unis)</region></placeName><wicri:cityArea>School of Electrical Engineering and Microelectronics Research Center, Georgia Institute of Technology, Atlanta</wicri:cityArea></affiliation></author><author><name sortKey="Higgins, R J" uniqKey="Higgins R">R. J. Higgins</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>School of Electrical Engineering and Microelectronics Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332-0269</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Géorgie (États-Unis)</region></placeName><wicri:cityArea>School of Electrical Engineering and Microelectronics Research Center, Georgia Institute of Technology, Atlanta</wicri:cityArea></affiliation></author><author><name sortKey="Lee, H" uniqKey="Lee H">H. Lee</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>AT&T Bell Laboratories, Murray Hill, New Jersey 07974</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>AT&T Bell Laboratories, Murray Hill</wicri:cityArea></affiliation></author><author><name sortKey="Cho, A Y" uniqKey="Cho A">A. Y. Cho</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>AT&T Bell Laboratories, Murray Hill, New Jersey 07974</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>AT&T Bell Laboratories, Murray Hill</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">95-0391521</idno><date when="1995-05-15">1995-05-15</date><idno type="stanalyst">PASCAL 95-0391521 AIP</idno><idno type="RBID">Pascal:95-0391521</idno><idno type="wicri:Area/Main/Corpus">01C534</idno><idno type="wicri:Area/Main/Repository">01BA17</idno><idno type="wicri:Area/France/Extraction">002051</idno></publicationStmt><seriesStmt><idno type="ISSN">0163-1829</idno><title level="j" type="abbreviated">Phys. Rev. B</title><title level="j" type="main">Physical Review B (Condensed Matter)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium antimonides</term><term>Electrodes</term><term>Experimental study</term><term>Fermi level</term><term>Gallium antimonides</term><term>Heterostructures</term><term>IV characteristic</term><term>Indium arsenides</term><term>Interband transitions</term><term>Magnetic field effects</term><term>Theoretical study</term><term>Tunnel effect</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Etude théorique</term><term>7320D</term><term>8530</term><term>Hétérostructure</term><term>Electrode</term><term>Gallium antimoniure</term><term>Aluminium antimoniure</term><term>Indium arséniure</term><term>Effet tunnel</term><term>Transition interbande</term><term>Caractéristique courant tension</term><term>Effet champ magnétique</term><term>Niveau Fermi</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The choice of the Fermi energy in the electrodes of a GaSb/AlSb/InAs/AlSb/GaSb type-II heterostructure has deep consequences on the physics of interband tunneling. We show that tunneling between electron and hole bands will result in three different current-voltage characteristics depending on the Fermi energy in the electrodes of the device. When electrode doping is high, the device characteristics exhibit a current shoulder at low bias followed by a current peak. Magnetotunneling experiments reveal additional current satellites: one emerging from the shoulder and another one emerging from the peak. The shift in the voltage position of these two features and that of the peak current is opposite when the magnetic field increases. This splitting is evidence of a hybridization gap due to k.p coupling between the electron band in InAs and the hole bands in GaSb.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. Rev. B</s0></fA03><fA05><s2>51</s2></fA05><fA06><s2>19</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Influence of electrode Fermi energy on interband tunneling</s1></fA08><fA11 i1="01" i2="1"><s1>NOGARET (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>MAUDE (D. K.)</s1></fA11><fA11 i1="03" i2="1"><s1>PORTAL (J. C.)</s1></fA11><fA11 i1="04" i2="1"><s1>MALDONADO (M. A.)</s1></fA11><fA11 i1="05" i2="1"><s1>MARTIN (K. P.)</s1></fA11><fA11 i1="06" i2="1"><s1>CARNAHAN (R. E.)</s1></fA11><fA11 i1="07" i2="1"><s1>HIGGINS (R. J.)</s1></fA11><fA11 i1="08" i2="1"><s1>LEE (H.)</s1></fA11><fA11 i1="09" i2="1"><s1>CHO (A. Y.)</s1></fA11><fA14 i1="01"><s1>Laboratoire de Physique des Solides, Institut National des Sciences Appliquées, 31077 Toulouse Cedex, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Service National des Champs Intenses, Centre National de la Recherche Scientifique, 38042 Grenoble Cedex, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>School of Electrical Engineering and Microelectronics Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332-0269</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1>AT&T Bell Laboratories, Murray Hill, New Jersey 07974</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA20><s1>13198-13202</s1></fA20><fA21><s1>1995-05-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144B</s2></fA43><fA44><s0>8100</s0><s1>© AIP</s1></fA44><fA47 i1="01" i2="1"><s0>95-0391521</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical Review B (Condensed Matter)</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The choice of the Fermi energy in the electrodes of a GaSb/AlSb/InAs/AlSb/GaSb type-II heterostructure has deep consequences on the physics of interband tunneling. We show that tunneling between electron and hole bands will result in three different current-voltage characteristics depending on the Fermi energy in the electrodes of the device. When electrode doping is high, the device characteristics exhibit a current shoulder at low bias followed by a current peak. Magnetotunneling experiments reveal additional current satellites: one emerging from the shoulder and another one emerging from the peak. The shift in the voltage position of these two features and that of the peak current is opposite when the magnetic field increases. This splitting is evidence of a hybridization gap due to k.p coupling between the electron band in InAs and the hole bands in GaSb.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C20D</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Etude théorique</s0></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Theoretical study</s0></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7320D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>8530</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Hétérostructure</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Heterostructures</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Electrode</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Electrodes</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gallium antimoniure</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gallium antimonides</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Aluminium antimoniure</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Aluminium antimonides</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Effet tunnel</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Tunnel effect</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Transition interbande</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Interband transitions</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Caractéristique courant tension</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>IV characteristic</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Effet champ magnétique</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Magnetic field effects</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Niveau Fermi</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Fermi level</s0></fC03><fN21><s1>213</s1></fN21><fN47 i1="01" i2="1"><s0>9513M0470</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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